user-k33231a@aalto.fi

Research groups

Antimatter and Nuclear Engineering publications since 1998

Fission and Radiation Physics group

2016 (6)

  1. Ala-Heikkilä, Jarmo, Suomalaisen Ydintekniikan Päivät 2.-3.11.2016, ATS Ydintekniikka 45, 10-11 (2016). http://ats-fns.fi/fi/ats-ydintekniikka/lehdet
  2. Isotalo, A.E., Davidson, G.G., Pandya, T.M., Wieselquist, W.A., Johnson, S.R., Flux renormalization in constant power burnup calculations, Annals of Nuclear Energy 96, pp. 148-157 (2016). http://dx.doi.org/10.1016/j.anucene.2016.05.031
  3. Dorval, E., A comparative study of leakage and diffusion coefficient models for few-group cross section generation with the Monte Carlo method, Annals of Nuclear Energy 90, pp. 353-363 (2016). http://dx.doi.org/10.1016/j.anucene.2015.12.021
  4. Vanhanen, R., Computing more proper covariances of energy dependent nuclear data, Nuclear Engineering and Design 297, 148-157 (2016). http://dx.doi.org/10.1016/j.nucengdes.2015.11.026
  5. Dorval, E., A comparison of Monte Carlo methods for neutron leakage at assembly level, Annals of Nuclear Energy 87, pp. 591-600 (2016). http://dx.doi.org/10.1016/j.anucene.2015.10.014
  6. Dorval, E., Directional diffusion coefficients and leakage-corrected discontinuity factors: implementation in Serpent and tests, Annals of Nuclear Energy 87, pp. 101-112 (2016). http://dx.doi.org/10.1016/j.anucene.2015.08.019

2015 (9)

  1. Ala-Heikkilä, Jarmo, YTERA päättyy kesken nousukiidon - miten käy ydinalan tutkijakoulutuksen?, ATS Ydintekniikka 44, 18-21 (2015). http://ats-fns.fi/fi/ats-ydintekniikka/lehdet
  2. Isotalo, A.E., Wieselquist, W.A., A method for including external feed in depletion calculations with CRAM and implementation into ORIGEN, Annals of Nuclear Energy No. 85, pp. 68-77 (2015). http://dx.doi.org/10.1016/j.anucene.2015.04.037
  3. Vanhanen, R. and Pusa, M., Survey of prediction capabilities of three nuclear data libraries for a PWR application, Annals of Nuclear Energy 83, 408-421 (2015). http://dx.doi.org/10.1016/j.anucene.2015.03.044
  4. Dorval, E. and Leppänen, J., Monte Carlo current-based diffusion coefficients: application to few-group constants generation in Serpent, Annals of Nuclear Energy 78, pp. 104-116 (2015). http://dx.doi.org/10.1016/j.anucene.2014.12.011
  5. Isotalo, A.E., Comparison of Neutronics-Depletion Coupling Schemes for Burnup Calculations - Continued Study, Nuclear Science and Engineering 180, pp. 286-300 (2015). http://dx.doi.org/10.13182/NSE14-92
  6. Vanhanen, R., Computing More Consistent Multigroup Nuclear Data Covariances, Nuclear Science and Engineering 181, 60-71 (2015). http://dx.doi.org/10.13182/NSE14-105
  7. Vanhanen, R., Uncertainty analysis of infinite homogeneous lead and sodium cooled fast reactors at beginning of life, Nuclear Engineering and Design 283, 168-174 (2015). http://dx.doi.org/10.1016/j.nucengdes.2014.06.023
  8. Vanhanen, R., Computing Positive Semidefinite Multigroup Nuclear Data Covariances, Nuclear Science and Engineering 179, 411-422 (2015). http://dx.doi.org/10.13182/NSE14-75
  9. Isotalo, A.E., Sahlberg, V., Comparison of Neutronics-Depletion Coupling Schemes for Burnup Calculations, Nuclear Science and Engineering 179, pp. 434-459 (2015). http://dx.doi.org/10.13182/NSE14-35

2014 (3)

  1. Mokhov, N., Aarnio, P., Eidelman, Y., Gudima, K., Konobeev, A., Pronskikh, V., Rakhno, I., Striganov, S., and Tropin, I., MARS15 code developments driven by the intensity frontier need, Progress in Nuclear Science and Technology 4, pp. 496-501 (2014). http://dx.doi.org/10.15669/pnst.4.496
  2. Ala-Heikkilä, Jarmo, Kouhia, Virpi, Loukusa, Henri, Papakonstantinou, Nikolaos, Paul Scherrer Institute - National center of competence, ATS Ydintekniikka 43, pp. 9-12 (2014). http://www.ats-fns.fi/images/files/ats_ydintekniikka/atsyt_2014_4.pdf
  3. Ala-Heikkilä, Jarmo, Missio: 200 uutta osaajaa vuosittain / Mission: 200 new experts each and every year, ATS Ydintekniikka 43, pp. 3-4 (2014). http://www.ats-fns.fi/images/files/ats_ydintekniikka/atsyt_2014_1.pdf

2013 (4)

  1. Ala-Heikkilä, Jarmo, Reaktoritöitä Ranskan malliin, ATS Ydintekniikka 42, 17-19 (2013). http://www.ats-ydintekniikka.fi/
  2. M. Apted, M., Karlsson, F., and Salomaa R., KYT2014 Review Report, Publications of the Ministry of Employment and the Economy 2013, pp 29 (2013). http://www.tem.fi/files/36242/TEMjul_10_2013_web_20032013.pdf
  3. Isotalo, A.E., Leppänen, J., Dufek, J., Preventing xenon oscillations in Monte Carlo burnup calculations by enforcing equilibrium xenon distribution, Annals of Nuclear Energy 60, 78-85 (2013). http://dx.doi.org/10.1016/j.anucene.2013.04.031
  4. Syri, S., Kurki-Suonio, T., Satka, V., and Cross S., Nuclear power at the crossroads of liberalised electricity markets and CO2 mitigation - case Finland, Energy Strategy Reviews 1, pp. 247-254 (2013). http://dx.doi.org/10.1016/j.esr.2012.11.005

2012 (10)

  1. Isotalo, A. and Aarnio, P., Advanced Burnup Calculations, New Type Nuclear Reactors (NETNUC) 2008-2011 Final Report No. 23, pp. 163-167 (2012).
  2. Aarnio, P.; Ala-Heikkilä, J.; Hoffman, I.; Ilander, T.; Klemola, S.; Mattila, A.; Antero Kuusi, A.; Moring, M.; Nikkinen, M.; Pelikan, A.; Ristkari, S.; Salonen, T.; Siiskonen, T.; Smolander, P.; Toivonen, H.; Ungar, K.; Vesterbacka, K.; Zhang, W., LINSSI - SQL Database for Gamma-Ray Spectrometry, Part II: Scripts and Interfaces, Version 2.3, Helsinki University of Technology, Department of Technical Physics, Report Series A No. TKK-FA862, 1-74 (2012). http://tfy.tkk.fi/aes/AES/courses/crspages/reports/TKK-F-A862.pdf
  3. Rintala L.T., SCWR Research at Aalto, New Type Nuclear Reactors (NETNUC) 2008-2011 Final Report (LUT Energia Tutkimusraportti) 23, 168-173 (2012).
  4. Palmu, M., Ala-Heikkilä, J., Käärmeitä ja kovapanosammuntoja 20.-22.5.2012 - YTERAn ensimmäinen vuosiseminaari Tvärminnessä, ATS Ydintekniikka 41, pp. 9-11 (2012). http://www.ats-ydintekniikka.fi/lehtiarkisto/
  5. Huttunen, R., Aurela, J., Ala-Heikkilä, J., Hyvärinen, J., Purhonen, H., Puska, E.K., Avolahti, J., Kansallisen ydinenergia-alan osaamistyöryhmän raportti, Työ- ja elinkeinoministeriön julkaisuja, Energia ja ilmasto No. 2/2012, 1-273 (2012). http://www.tem.fi/files/32424/OTRpainoversio080312.pdf
  6. Valtavirta, V., Viitanen, T., Kajanto, K.,, Reactor Physics in AaltoSCI Department of Applied Physics, New Type Nuclear Reactors (NETNUC) 2008-2011 Final Report No. 23, pp.156-162 (2012).
  7. Salomaa, R., Aarnio, P., Galiana, B., Giedraityte, Z., Isotalo, A., Kuopanporttti, J., Muñoz, A., Rintala, L., Silvonen, T., Vanhanen, R., and Viitanen, T., Thorium fuel cycle studies in NETNUC, New Type Nuclear Reactors (NETNUC) 2008-2011 Final Report No. 23, pp. 136-145 (2012).
  8. Kuopanporttti, J., Vanhanen, R., and Viitanen, T., Thorium Fuel in Light Water Reactors, New Type Nuclear Reactors (NETNUC) 2008-2011 Final Report No. 23, pp.146-155 (2012).
  9. Kyrki-Rajamäki, R., Salomaa, R., and Vanttola, T., NETNUC project in the world-wide development network of the new type generation IV nuclear reactors and fuel cycles, New Type Nuclear Reactors (NETNUC) 2008-2011 Final Report No. 23, pp. 9-20 (2012).
  10. Ala-Heikkilä, J., An Overview of Gen-IV Research in Aalto University, New Type Nuclear Reactors (NETNUC) 2008-2011 Final Report No. 23, pp. 128-135 (2012).

2011 (5)

  1. Isotalo, A.E., Aarnio, P.A., Substep methods for burnup calculations with Bateman solutions, Annals of Nuclear Energy 38, 2509-2514 (2011).
  2. Aarnio, P.; Ala-Heikkilä, J.; Hoffman, I.; Ilander, T.; Klemola, S.; Mattila, A.; Antero Kuusi, A.; Moring, M.; Nikkinen, M.; Pelikan, A.; Ristkari, S.; Salonen, T.; Siiskonen, T.; Smolander, P.; Toivonen, H.; Ungar, K.; Vesterbacka, K.; Zhang, W., LINSSI - SQL Database for Gamma-Ray Spectrometry, Part I: Database, Version 2.3,, Helsinki University of Technology, Department of Technical Physics, Report Series A No. TKK-FA861, pp. 1-119 (2011). http://tfy.tkk.fi/aes/AES/courses/crspages/reports/TKK-F-A861.pdf
  3. Isotalo, A.E., Aarnio, P.A., Higher order methods for burnup calculations with Bateman solutions, Annals of Nuclear Energy 38, 1987-1995 (2011).
  4. Viitanen, T., Leppänen, J., New Data Processing Features in the Serpent Monte Carlo Code, Journal of the Korean Physical Society 59, pp. 1365-1368 (2011).
  5. Isotalo, A.E. and Aarnio, P.A., Comparison of depletion algorithms for large systems of nuclides, Annals of Nuclear Energy 38, pp. 261-268 (2011).

2010 (1)

  1. Zhang, W., Ala-Heikkilä, J., Ungar, K., Hoffman, I., Lawrie, R., Automated analysis for large amount gaseous fission product gamma-scanning spectra from nuclear power plant and its data mining, Journal of Radioanalytical and Nuclear Chemistry 284, 647-651 (2010).

2008 (5)

  1. Aarnio, Pertti; Ala-Heikkilä, Jarmo; Hakulinen, Timo, A multi-user server-based framework for Shaman gamma-ray spectrum identification software, Journal of radioanalytical and nuclear chemistry. Articles 276, 651-655 (2008).
  2. Aarnio, Pertti; Ala-Heikkilä, Jarmo; Hakulinen, Timo, Performance of UniSampo-Shaman with gamma-ray spectra containing known traces of fission products, Journal of radioanalytical and nuclear chemistry. Articles 276, 455-460 (2008).
  3. Aarnio, Pertti; Ala-Heikkilä, Jarmo; Isolankila, Arto; Kuusi, Antero; Moring, Mikael; Nikkinen, Mika; Siiskonen, Teemu; Toivonen, Harri; Ungar, Kurt; Zhang, Weihua, LINSSI: Database for gamma-ray spectrometry, Journal of radioanalytical and nuclear chemistry. Articles 276, 631-637 (2008).
  4. Aarnio, Pertti; The CMS Collaboration, The CMS experiment at the CERN LHC, Journal of instrumentation 3, 1-334 (2008). http://www.iop.org/EJ/toc/1748-0221/3/08
  5. Ala-Heikkilä, Jarmo, Analysis Methods for Airborne Radioactivity, TKK Dissertations 129, 1-188 (2008). http://lib.tkk.fi/Diss/2008/isbn9789512294404/

2007 (3)

  1. Ala-Heikkilä Jarmo, Ydinalan kansallinen koulutus arvioitu - parannettu painos YK5 käynnissä, ATS Ydintekniikka 36, 18-19 (2007). http://www.ats-fns.fi/magazine/lehtiarkisto.html
  2. Aarnio, Pertti; CMS collaboration, CMS physics technical design report, volume II: Physics performance, Journal of physics g-nuclear and particle physics 34, pp. 995-1579 (2007).
  3. Ungar, K.; Zhang, W.; Aarnio, P.; Ala-Heikkila, J.; Toivonen, H.; Siiskonen, T.; Isolankila, A.; Kuusi, A.; Moring, M.; Nikkinen, M., Automation of analysis of airborne radionuclides observed in Canadian CTBT radiological monitoring networks using LINSSI, Journal of radioanalytical and nuclear chemistry 272, pp. 285-291 (2007).

2005 (3)

  1. Aarnio, Pertti; Ala-Heikkilä, Jarmo; Hakulinen, Timo; Nikkinen, Mika; Routti, Jorma, WWW-based remote analysis framework for UniSampo and Shaman software, Journal of Radioanalytical and Nuclear Chemistry 264, 255-258 (2005).
  2. Aarnio, Pertti; Ala-Heikkilä, Jarmo; Ansaranta, Timo; Hakulinen, Timo, Analysis pipeline for air filter gamma-ray spectra from the CTBT verification network, Journal of Radioanalytical and Nuclear Chemistry 263, pp. 251-257 (2005).
  3. Aarnio, Pertti; Ala-Heikkilä, Jarmo; Hakulinen, Timo; Huhtinen, Mika, High-Energy Proton Irradiation and Induced Radioactivity Analysis of Some Construction Materials for the CERN LHC, Journal of Radioanalytical and Nuclear Chemistry 264, (2005).

2004 (1)

  1. Aarnio, Pertti; Ala-Heikkilä, Jarmo; Hakulinen, Timo, Ydinkoekiellon valvontaa suomalaismenetelmin, ATS ydintekniikka 33, s. 15-18 (2004).

2002 (2)

  1. Ala-Heikkilä, Jarmo, Vuosikokouksen kuulumisia, ATS Ydintekniikka 31, 35 (2002).
  2. Ala-Heikkilä, Jarmo; Nevander, Olli, Eduskunta teki sen viimein - mutta miten tähän tultiin, ATS Ydintekniikka 31, 21-23 (2002).

2001 (5)

  1. Ala-Heikkilä, J., ATS:n vuosikokouksen kuulumisia 26.2.2001, ATS Ydintekniikka 30, 5-6 (2001).
  2. Ala-Heikkilä, J., Anttila, M., Paile, W., Pöllänen, R. & Zilliacus R., Uraaniammukset - hiipivä kuolema vai paljon melua tyhjästä?, ATS Ydintekniikka 30, 31-33 (2001).
  3. Aarnio, Pertti; Ala-Heikkilä, Jarmo; Hakulinen, Timo; Nikkinen, Mika, The Nuclide Identification System SHAMAN in the Verification of the CTBT, Journal of Radioanalytical and Nuclear Chemistry 248, 587-593 (2001).
  4. Aarnio, P., Hakulinen, T. & Huhtinen, M., Gamma-spectrometry and residual nuclide analysis of pion irradiated PbWO4 crystals, Journal of Radioanalytical and Nuclear Chemistry 248, 385-393 (2001).
  5. Aarnio, P., Nikkinen, M. & Routti, J., UNISAMPO, comprehensive software for gamma-spectrum processing, Journal of Radioanalytical and Nuclear Chemistry 248, 371-375 (2001).

1999 (1)

  1. Ala-Heikkilä, J., Kalli, H. & Salomaa, R., Ydinturvallisuusyhteistyömme tulokset lähialueella, ATS Ydintekniikka 28, s. 24-26 (1999).

1998 (2)

  1. Aarnio, P., Ala-Heikkilä, J., Hakulinen, T. & Nikkinen, M., Application of the Nuclide Identification System SHAMAN in Monitoring the Comprehensive Test Ban Treaty, Journal of Radioanalytical and Nuclear Chemistry 235, 95-103 (1998).
  2. Aarnio, P., Ala-Heikkilä, J., Hakulinen, T. & Nikkinen, M., Gamma Spectrometric Monitoring of Environmental Radioactivity Using a Mobile Equipment, Journal of Radioanalytical and Nuclear Chemistry 233, 217-223 (1998).

Positron Physics and Defect Spectroscopy group

2017 (1)

  1. Prozheeva, V., Makkonen, I., Cuscó, R., Artús, L., Dadgar, A., Plazaola, F., and Tuomisto, F., Radiation-induced alloy rearrangement in InxGa1−xN,, Applied Physics Letters 110, 132104 (2017). http://dx.doi.org/10.1063/1.4979410

2016 (12)

  1. Kujala, J., Slotte, J., Tuomisto, F., Hiller, D., and Zacharias, M., Si nanocrystals and nanocrystal interfaces studied by positron annihilation, Journal of Applied Physics 120, 145302 (2016). http://dx.doi.org/10.1063/1.4964503
  2. Kalliovaara, T., Slotte, J., Makkonen, I., Kujala, J., Tuomisto, F., Milazzo, R., Impellizzeri, G., Fortunato G., and Napolitani, E., Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium, Applied Physics Letters 109, 182107 (2016). http://dx.doi.org/10.1063/1.4966947
  3. Linez, F., Makkonen, I., and Tuomisto, F., Calculation of positron annihilation characteristics of six main defects in 6H-SiC and the possibility to distinguish them experimentally, Physical Review B 94, 014103 (2016). http://dx.doi.org/10.1103/PhysRevB.94.014103
  4. Callewaert, V., Shastry, K., Saniz, R., Makkonen, I., Barbiellini, B., Assaf, B.A., Heiman, D., Moodera, J.S., Partoens, B., Bansil, A., and Weiss, A.H., Positron surface state as a new spectroscopic probe for characterizing surfaces of topological insulator materials, Physical Review B 94, 115411 (2016). http://dx.doi.org/10.1103/PhysRevB.94.115411
  5. Kujala, J., Südkamp, T., Slotte, J., Makkonen, I., Tuomisto, F., and Bracht, H., Vacancy-donor complexes in highly n-type Ge doped with As, P and Sb, Journal of Physics: Condensed Matter 28, 335801 (2016). http://dx.doi.org/10.1088/0953-8984/28/33/335801
  6. Dhayalan, S.K., Kujala, J., Slotte, J., Pourtois, G., Simoen, E., Rosseel, E., Hikavyy, A., Shimura, Y., Iacovo, S., Stesmans, A., Loo, R., and Vandervorst, W., On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films, Applied Physics Letters 108, 082106 (2016).
  7. Slotte, J., Makkonen, I., and Tuomisto, F., Point defect identification with positron annihilation spectroscopy in narrow band gap semiconductors, ECS Journal of Solid State Science and Technology 5, P3166-P3171 (2016). http://jss.ecsdl.org/content/5/4/P3166.short
  8. Latkowska, M., Baranowski, M., Linhart, W., Janiak, F., Misiewicz, J., Segercrantz, N., Tuomisto, F., Zhuang, Q., Krier, A., and Kudrawiec, R., Influence of nitrogen and antimony on the optical quality of InNAs(Sb) alloys, Journal of Physics D: Applied Physics 49, 115105 (2016).
  9. Zubiaga, A., Ervasti, M.M., Makkonen, I., Harju, A., Tuomisto, F., and Puska, M. J., Modeling positronium beyond the single particle approximation, Journal of Physics B: Atomic, Molecular and Optical Physics 49, 064005 (2016). http://dx.doi.org/10.1088/0953-4075/49/6/064005
  10. Geiger, E., Bès, R., Martin, P., Pontillon, Y., Solari, P.L., and Salome, M., Fission products behaviour in UO2 submitted to nuclear severe accident conditions, Journal of Physics: Conference Series 712, 012098 (2016). http://iopscience.iop.org/article/10.1088/1742-6596/712/1/012098/meta;jsessionid=CF0327B38336FE5AFCA8FCEE57D4B4B8.c4.iopscience.cld.iop.org
  11. Cordier, Y., Damilano, B., Aing, P., Chaix, C., Linez, F., Tuomisto, F., Vennéguès, P., Frayssinet, E., Lefebvre, D., Portail, M., and Nemoz, M., GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source, Journal of Crystal Growth 433, pp. 165-171 (2016). http://dx.doi.org/10.1016/j.jcrysgro.2015.10.017
  12. Makkonen, I., Korhonen, E., Prozheeva, V., and Tuomisto, F., Identification of vacancy defect complexes in transparent semiconducting oxides ZnO, In2O3 and SnO2, Journal of Physics: Condensed Matter 28, 224002 (2016). http://dx.doi.org/10.1088/0953-8984/28/22/224002

2015 (8)

  1. Segercrantz, N. , Yu, K.M.,Ting, M., Sarney, W.L., Svensson, S.P., Novikov, S.V.,Foxon, C.T., Walukiewicz, W., Electronic band structure of highly mismatched GaN1-xSbx alloys in a broad composition range, Applied Physics Letters 107, 142104 (2015). http://dx.doi.org/10.1063/1.4932592
  2. Segercrantz, N., Makkonen, I., Slotte, J., Kujala, J., Veal, T.D., Ashwin, M.J., and Tuomisto, F., Increased p-type conductivity in GaNxSb1-x, experimental and theoretical aspects, Journal of Applied Physics 118, 085708 (2015). http://dx.doi.org/10.1063/1.4929751
  3. Korhonen, E., Tuomisto, F., Gogova, D., Wagner, G., Baldini, M., Galazka, Z., Schewski, R., and Albrecht, M., Electrical compensation by Ga vacancies in Ga2O3, Applied Physics Letters 106, 242103 (2015). http://dx.doi.org/10.1063/1.4922814
  4. Aaltonen, P., Yagodzinskyy, Yu., Saukkonen, T., Kilpeläinen, S., Tuomisto, F., and Hänninen, H., Role of excessive vacancies in transgranular stress corrosion cracking of pure copper, Corrosion Reviews 33, pp. 487-500 (2015). http://dx.doi.org/10.1515/corrrev-2015-0047
  5. Marchiori, C.F.N., Yamamoto, N.A.D., Matos, C.F., Kujala, J., Macedo, A.G., Tuomisto, F., Zarbin, A.J.G., Koehler, M., and Roman, L.S., Annealing effect on donor-acceptor interface and its impact on the performance of organic photovoltaic devices based on PSiF-DBT copolymer and C60, Applied Physics Letters 106, 13301 (2015). http://dx.doi.org/10.1063/1.4916515
  6. Zubiaga, A., Tuomisto, F., and Puska, M.J., Pick-off Annihilation of Positronium in Matter Using Full Correlation Single Particle Potentials: Solid He, Journal of Physical Chemistry B 119, pp. 1747-1755 (2015). http://dx.doi.org/10.1021/jp5106295
  7. Zhang, Y., Debelle, A., Boulle, A., Kluth, P., and Tuomisto, F., Advanced techniques for characterization of ion beam modified materials, Current Opinion in Solid State & Materials Science 19, pp. 19-28 (2015). http://dx.doi.org/10.1016/j.cossms.2014.09.007
  8. Korhonen, E., Prozheeva, V., Tuomisto, F., Bierwagen, O., Speck, J.S., White, M.E., Gałązka, Z., Liu, H., Izyumskaya, N., Özgür, U., and Morkoç, H., Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO, Semiconductor Science and Technology 30, 024011 (2015). http://dx.doi.org/10.1088/0268-1242/30/2/024011

2014 (18)

  1. Kujala, J., Segercrantz, N., Tuomisto, F., and Slotte, J., Native point defects in GaSb, Journal of Applied Physics 116, 143508 (2014). http://dx.doi.org/10.1063/1.4898082
  2. Korhonen, E., Tuomisto, F., Bierwagen, O., Speck, J.S., and Gałązka, Z., Compensating vacancy defects in Sn- and Mg-doped In2O3, Physical Review B 90, 245307 (2014). http://dx.doi.org/10.1103/PhysRevB.90.245307
  3. Madia, O., Segercrantz, N., Afanasjev, V., Stesmans, A., Souriau, L., Slotte, J., and Tuomisto, F., Charge transition level of GePb1 centers at interfaces of SiO2/GexSi1-x/SiO2 heterostructures investigated by positron annihilation spectroscopy, physica status solidi (b) 251, pp. 2211-2215 (2014). http://dx.doi.org/10.1002/pssb.201400040
  4. Segercrantz, N., Slotte, J., Makkonen, I., Kujala, J., Tuomisto, F., Song, Y., and Wang, S., Point defect balance in epitaxial GaSb, Applied Physics Letters 105, 082113 (2014). http://dx.doi.org/10.1063/1.4894473
  5. Kilanski, L., Rauch, C., Tuomisto, F., Podgórni, A., Dynowska, E., Dobrowolski, W., Fedorchenko, I.V., and Marenkin, S.F., Point defects and p-type conductivity in Zn1-xMnxGeAs2, Journal of Applied Physics 116, 023501 (2014). http://dx.doi.org/10.1063/1.4887118
  6. Zubiaga, A., Tuomisto, F., Puska, M., Full-correlation single-particle positron potentials for a positron and positronium interacting with atoms, Physical Review A 89, 052707 (2014). http://arxiv.org/abs/1305.6809
  7. Rutkowski, M., McNicholas, K., Zeng, Z., Tuomisto, F., and Brillson, L., Optical Identification of Oxygen Vacancy Formation at SrTiO3 - (Ba,Sr)TiO3 Heterostructures, Journal of Physics D: Applied Physics 47, 255303 (2014). http://dx.doi.org/10.1088/0022-3727/47/25/255303
  8. Särkijärvi, S., Sintonen, S., Tuomisto, F., Bosund, M., Suihkonen, S., and Lipsanen, H., Effect of growth temperature on the epitaxial growth of ZnO on GaN by ALD, Journal of Crystal Growth 398, pp. 18-22 (2014). http://dx.doi.org/10.1016/j.jcrysgro.2014.04.006
  9. Tuomisto, F., Kuittinen, T., Zajac, M., Doradzinski, R., and Wasik, D., Vacancy-hydrogen complexes in ammonothermal GaN, Journal of Crystal Growth 403, pp. 114-118 (2014). http://dx.doi.org/10.1016/j.jcrysgro.2014.06.005
  10. Linez, F., Ritt, M., Rauch, C., Kilanski, L., Choi, S., Speck, J. S., Räisänen, J., and Tuomisto, F.,, He implantation induced defects in InN, Journal of Physics: Conference Series 505, 012012 (2014). http://dx.doi.org/10.1088/1742-6596/505/1/012012
  11. Tuomisto, F., Norrman, V., and Makkonen, I., On the sensitivity of positron annihilation signals to alloy homogeneity in InxGa1-xN, Journal of Physics: Conference Series 505, 012042 (2014). http://dx.doi.org/10.1088/1742-6596/505/1/012042
  12. Kuittinen, T., Tuomisto, F., Kumagai, Y., Nagashima, T., Kinoshita, T., Koukitu, A., Collazo, R., and Sitar, Z., Vacancy defects in UV-transparent HVPE-AlN, physica status solidi (c) 11, 405 (2014). http://dx.doi.org/10.1002/pssc.201300529
  13. Fedorchenko, I.V., Marenkin, S.F., Avdonin, A., Domukhovski, V., Dobrowolski, W., Heikinheimo, J., Korhonen, E., and Tuomisto, F., Growth, characterization and study of ferromagnetism of bismuth telluride doped with manganese, Journal of Crystal Growth 401, pp. 636-639 (2014). http://dx.doi.org/10.1016%2Fj.jcrysgro.2013.12.067
  14. Prozheeva, V., Tuomisto, F., Koblmüller, G., Speck, J.S., Knübel, A., and Aidam, R., Vacancy defect formation in PA-MBE grown C-doped InN, physica status solidi (c) 11, 530 (2014). http://dx.doi.org/10.1002/pssc.201300507
  15. Korhonen, E., Tuomisto, F., Bierwagen, O., Speck, J.S., White, M.E., and Galazka, Z., Vacancy complexes in Sb-doped SnO2, AIP Conference Proceedings 1583, 368 (2014). http://dx.doi.org/10.1063/1.4865672
  16. Segercrantz, N., Kujala, J., Tuomisto, F., Slotte, J., Song, Y., and Wang, S., Defect studies in MBE grown GaSb1-xBix layers, AIP Conference Proceedings 1583, 174 (2014). http://dx.doi.org/10.1063/1.4865629
  17. Madia, O., Nguyen, A.P.D., Thoan, N.H., Afanasev, V., Stesmans, A., Souriau, L, Slotte, J., and Tuomisto, F., Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/Si1-xGex/SiO2/(100)Si structures with nm-thin Si1-xGex layers, Applied Surface Science 291, pp. 11-15 (2014). http://dx.doi.org/10.1016/j.apsusc.2013.09.025
  18. Jussila, H., Yu, K.M., Kujala, J.,Tuomisto, F., Nagarajan, S., Lemettinen, J., Huhtio, T., Tuomi, T.O., Lipsanen, H., and Sopanen, M., Substitutionality of nitrogen atoms and formation of nitrogen complexes and point defects in GaPN alloys, Journal of Physics D: Applied Physics 47, 075106 (2014). http://dx.doi.org/10.1088/0022-3727/47/7/075106

2013 (15)

  1. Kilpeläinen, S., Kujala, J., Tuomisto, F., Slotte, J., Lu Y.-W., and Nylandsted Larsen, A., Si nanoparticle interfaces in Si/SiO2 solar cell materials, Journal of Applied Physics 114, 164316 (2013). http://dx.doi.org/10.1063/1.4824826
  2. Virkkala, V., Havu, V., Tuomisto, F., and Puska, M.J., Modeling Bi induced changes in electronic structures of GaAs1-xBix alloys, Physical Review B 88, 235201 (2013). http://prb.aps.org/abstract/PRB/v88/i23/e235201
  3. Nykänen, H., Suihkonen, S., Svensk, O., Sopanen, M., and Tuomisto, F., Band-Edge Luminescnence Degradation by Low Energy Electron Beam Irradiation in GaN Grown by Metal-Organic Vapor Phase Epitaxy in H2 and N2 ambients, Japanese Journal of Applied Physics 52, 11NH04 (2013). http://dx.doi.org/10.7567/JJAP.52.11NH04
  4. Tuomisto, F., Rauch, C., Wagner, M.R., Hoffmann, A., Eisermann, S., Meyer, B.K., Kilanski, L., Tarun, M.C., and McCluskey, M.D., Nitrogen and vacancy clusters in ZnO, Journal of Materials Research 28, pp. 1977-1983 (2013). http://dx.doi.org/10.1557/jmr.2013.195
  5. Homeyer, E., Mattila, P., Oksanen, J., Sadi, T., Nykänen, H., Suihkonen, S., Symonds, C., Tulkki, J., Tuomisto, F., Sopanen. M., and Bellessa, J., Enhanced light extraction from InGaN/GaN quantum wells with silver gratings, Applied Physics Letters 102, 081110 (2013). http://dx.doi.org/10.1063/1.4794066
  6. Virkkala, V., Havu, V., Tuomisto, F., Puska, M.J., Origin of band gap bowing in dilute GaAs1-xNx and GaP1-xNx alloys: a real-space view, Physical Review B 88, 035204 (2013). http://dx.doi.org/10.1103/PhysRevB.88.035204
  7. Tuomisto, F. and Makkonen, I., Defect identification in semiconductors with positron annihilation: Experiment and theory, Reviews of Modern Physics 85, pp. 1583-1631 (2013). http://link.aps.org/doi/10.1103/RevModPhys.85.1583
  8. Brillson, L.J., Zhang, Z., Doutt, D.R., Look, D.C., Svensson, B.G., Kuznetsov, A.Yu., and Tuomisto, F., Interplay of dopants and native point defects in ZnO, physica status solidi (b) 250, pp. 2110-2113 (2013). http://dx.doi.org/10.1002/pssb.201200943
  9. Zubiaga, A., Reurings, F., Tuomisto, F., Plazaola, F., Garcia, J.A., Kuznetsov, A.Yu., Egger, W., Zuniga-Perez, J., and Munoz-Sanjose, V., On the interplay of point defects and Cd in non-polar ZnCdO films, Journal of Applied Physics 113, 023512 (2013). http://dx.doi.org/10.1063/1.4775396
  10. Tuomisto, F., Open volume defects: positron annihilation spectroscopy, Semiconductors and Semimetals: Oxide Semiconductors, Eds. B.G. Svensson, S.J. Pearton and C. Jagadish (Elsevier) 88, pp. 39-65 (2013). http://dx.doi.org/10.1016/B978-0-12-396489-2.00002-3
  11. Zubiaga, A., Tuomisto, F., and Puska, M.J., Study of unbound HePs using Exact Diagonalization technique, Materials Science Forum 733, pp. 38-42 (2013). http://dx.doi.org/10.4028/www.scientific.net/MSF.733.38
  12. Zubiaga, A., Tuomisto, F., and Puska, M.J., Exchange and correlation effects in the strongly interacting He-Ps system, Journal of Physics: Conference Series 443, 012004 (2013). http://iopscience.iop.org/1742-6596/443/1/012004/
  13. Kujala, J., Slotte, J., and Tuomisto, F., Acceptors in undoped GaSb; the role of vacancy defects, Journal of Physics: Conference Proceedings 443, 012042 (2013). http://dx.doi.org/10.1088/1742-6596/443/1/012042
  14. Nykänen, H., Suihkonen, S., Sopanen, M., and Tuomisto, F., Thermally assisted recovery of low energy electron beam irradiation induced optical degradation of GaN, physica status solidi (c) 10, pp. 461-463 (2013). http://dx.doi.org/10.1002/pssc.201200573
  15. Koskelo, O., Köster, U., Tuomisto, F., Helariutta, K., Sopanen, M., Suihkonen, S., Svensk, O., and Räisänen, J., Migration kinetics of ion-implanted beryllium in ZnO and GaN, Physica Scripta 88, 035603 (2013). http://dx.doi.org/10.1088/0031-8949/88/03/035603

2012 (20)

  1. Quinn, J.F., Pas, S.J., Quinn, A., Yap, H.P., Suzuki, R., Tuomisto, F., Shekibi, B.S., Mardel, J.I., Hill, A.J., and Caruso, F., Tailoring the Chain Packing in Ultrathin Polyelectrolyte Films Formed by Sequential Adsorption: Nanoscale Probing by Positron Annihilation Spectroscopy, Journal of the American Chemical Society 134, pp. 19808-19819 (2012).
  2. Ottaviani, L., Kazan, M., Biondo, S., Tuomisto, F., Milesi, F., Duchaine, J., Torregrosa, F., and Palais, O., Study of Defects Generated by Standard- and Plasma- Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers, Materials Science Forum 725, pp. 41-44 (2012).
  3. Brillson, L.J., Dong, Y., Tuomisto, F., Svensson, B.G., Kuznetsov, A.Yu., Doutt, D., Mosbacker, H.L., Cantwell, G., Zhang, J., Song, J. J., Fang, Z.-Q., and Look, D.C., Interplay of native point defects with ZnO Schottky barriers and doping, Journal of Vacuum Science and Technology B 30, 050801 (2012).
  4. Rauch, C., Tuomisto, F., King, P. D. C., Veal, T. D., Lu, H., Schaff, W. J., Self-compensation in highly n-type InN, Applied Physics Letters 101, 011903-1 (2012). http://dx.doi.org/10.1063/1.4732508
  5. Virkkala, V., Havu, V., Tuomisto, F., and Puska, M.J., Native Point Defect Energetics in GaSb: enabling p-type conductivity of undoped GaSb, Physical Review B 86, 144101 (2012).
  6. Knutsen, K.E., Galeckas, A., Zubiaga, A., Tuomisto, F., Farlow, G.C., Svensson, B.G., and Kuznetsov, A.Yu., Zinc vacancy and oxygen interstitial in ZnO revealed by sequential annealing and electron irradiation, Physical Review B 86, 121203(R) (2012).
  7. Slotte, J., and Tuomisto, F., Advances in positron annihilation spectroscopy of Si, Ge and their alloys, Materials Science in Semiconductor Processing 15, pp. 669-674 (2012).
  8. Nykänen, H., Suihkonen, S., Kilanski, L., Sopanen, M., and Tuomisto, F., Ga-vacancy activation under low energy electron irradiation in GaN-based materials, MRS Symposium Proceedings 1432, 782 (2012).
  9. Zubiaga, A., Tuomisto, F., and Puska, M.J., Matter-positronium interaction: An exact diagonalization study of the He atom - positronium system, Physical Review A 85, 052707:1-7 (2012).
  10. Kilanski, L., Tuomisto, F., Szymczak, R., and Kruszka, R., Magnetically active vacancy related defects in irradiated GaN layers, Applied Physics Letters 101, 072102 (2012).
  11. Nykänen, H., Suihkonen, S., Kilanski, L., Sopanen, M., and Tuomisto, F., Low energy electron beam induced vacancy activation in GaN, Applied Physics Letters 100, 122105 (2012).
  12. Rauch, C., Tuomisto, F., Vilalta-Clemente, A., Lacroix, B., Ruterana, P. , Kraeusel, S., Hourahine, B., and Schaff., W. J., Defect evolution and interplay in n-type InN, Applied Physics Letters 100, 091907 (2012). http://link.aip.org/link/?APL/100/091907
  13. Mäki, J.-M., Kuittinen, T., Korhonen, E., and Tuomisto, F., Positron lifetime spectroscopy with optical excitation: case study of natural diamond, New Journal of Physics 14, 035023:1-16 (2012).
  14. Brillson, L.J., Dong, Y., Tuomisto, F., Svensson, B.G., Kuznetsov, A.Yu., Doutt, D., Mosbacker, H.L., Cantwell, G., Zhang, J., Song, J.J., Fang, Z.-Q., and Look, D.C., Native point defects at ZnO surfaces, interfaces and bulk films, physica status solidi (c) 9, pp. 1566-1569 (2012).
  15. Makkonen, I., Rauch, C., Mäki, J.-M., and Tuomisto, F., Chemical analysis using coincidence Doppler broadening and supporting first-principles theory: applications to vacancy defects in compound semiconductors, Physica B 407, pp. 2684-2688 (2012). http://dx.doi.org/10.1016/j.physb.2012.02.039
  16. Korhonen, E., Kuitunen, K., Tuomisto, F., Urbaniak, A., Igalson, M., Larsen, J., Gütay, L., Siebentritt, S., and Y. Tomm, Vacancy defects in epitaxial thin- lm CuGaSe2 and CuInSe2, Physical Review B 86, 064102 (2012).
  17. Virkkala, V., Havu, V., Tuomisto, F., and Puska, M.J., Hybrid functional study of band structures of GaAs1-xNx and GaSb1-xNx Alloys, Physical Review B 85, 085134:1-8 (2012).
  18. Tuomisto, F., Mäki, J.-M., Rauch, C., and Makkonen, I., On the formation of vacancy defects in III-nitride semiconductors, Journal of Crystal Growth 350, pp. 95-97 (2012).
  19. Rauch, C., Öcal, T., Giesen, C., Heuken, M., and Tuomisto, F., Point defect evolution in low-temperature MOCVD growth of InN, physica status solidi (a) 209, pp. 87-90 (2012). http://dx.doi.org/10.1002/pssa.201100083
  20. Veternikova, J., Degmova, J., Kilpeläinen, S., Slugen, V., Tuomisto, F., Räisänen, J., Krsjak, V., Petriska, M., Sojak, S., Hinca, R., and Stacho, M., Non-destructive examination of helium implanted HTRs construction materials, Nuclear Engineering and Design 251, pp. 354-359 (2012).

2011 (15)

  1. Mäki, J.-M., Makkonen, I., Tuomisto, F., Karjalainen, A., Suihkonen, S., Räisänen, J., Chemekova, T.Yu., and Makarov, Yu.N., Identification of the VAl - ON -defect complex in AlN single crystals, Physical Review B 84, 081204(R) (2011).
  2. Johansen, K.M., Zubiaga, A., Tuomisto, F., Monakhov, E.V., Kuznetsov, A.Yu., and Svensson, B.G., H passivation of Li on Zn-site in ZnO: Positron annihilation spectroscopy and secondary ion mass spectrometry, Physical Review B 84, 115203 (2011).
  3. Mäki, J.-M., Tuomisto, F., Varpula, A., Fisher, D., Khan, R.U.A., and Martineau, P.M., Time dependence of charge transfer processes in diamond studied with positrons, Physical Review Letters 107, 217403 (2011).
  4. Neuvonen, P.T., Vines, L.,Venkatachalapathy, V., Zubiaga, A., Tuomisto, F., Hallén, A., Svensson, B.G. and Kuznetsov, A.Yu., Defect evolution and impurity migration in Na implanted ZnO, Physical Review B 84, 205202 (2011).
  5. Rauch, C., Makkonen, I., Tuomisto, F., Identifying vacancy complexes in compound semiconductors with positron annihilation spectroscopy: a case study of InN, Physical Review B 84, 125201 (2011). http://link.aps.org/doi/10.1103/PhysRevB.84.125201
  6. Roever, M., Malindretos, J., Bedoya-Pinto, A., Rizzi, A., Rauch, C., and Tuomisto, F., Tracking defect-induced ferromagnetism in GaN:Gd, Physical Review B 84, 081201(R) (2011). http://prb.aps.org/abstract/PRB/v84/i8/e081201
  7. Look, D.C., Leedy, K.D., Vines, L., Svensson, B.G., Zubiaga, A., Tuomisto, F., Doutt, D., and Brillson, L.J., Self-compensation in semiconductors: the Zn-vacancy in Ga-doped ZnO, Physical Review B 84, 115202 (2011).
  8. Kilpeläinen, S., Tuomisto, F., Slotte, J., Lundsgaard Hansen, J., and Nylandsted Larsen, A., Evolution of E-centers during the annealing of Sb-doped Si0.8Ge0.2, Physical Review B 83, 094115 (2011).
  9. Slotte, J., Kilpeläinen, S., Tuomisto, F., Räisänen, J., and Nylansted Larsen, A., Direct observations of the vacancy and its annealing in germanium, Physical Review B 83, 235212 (2011).
  10. Rauch, C., Makkonen, I., Tuomisto, F., Towards Experimental Identification of Vacancy Complexes in InN, physica status solidi (a) 208, pp. 1548-1550 (2011). http://onlinelibrary.wiley.com/doi/10.1002/pssa.201001160/abstract
  11. Johansen, K.M., Zubiaga, A., Makkonen, I., Tuomisto, F., Neuvonen, P.T., Knutsen, K.E., Monakhov, E.V., Kuznetsov, A.Yu., and Svensson, B.G., Identification of substitutional Li in n-type ZnO and its role as an acceptor, Physical Review B 83, 245208:1-7 (2011). http://link.aps.org/doi/10.1103/PhysRevB.83.245208
  12. Sane, P., Tuomisto, F., and Holopainen, J.M., Void volume variations in contact lens polymers, Contact Lens & Anterior Eye 34, pp. 2-6 (2011).
  13. Chithambo, M.L., Sane, P., and Tuomisto, F., Positron and luminescence lifetimes in annealed synthetic quartz, Radiation Measurements 46, pp. 310-318 (2011).
  14. Tuomisto, F., Vacancy defects in III-nitrides: what does positron annihilation spectroscopy reveal?, Journal of Physics: Conference Series 265, 012003 (2011).
  15. Zubiaga, A., Garcia, J.A., Plazaola, F., Zuñiga-Perez, J., and Muñoz-Sanjose, V., Determination of defect content and defect profile in semiconductor heterostructures, Journal of Physics: Conference Series 265, 012004 (2011).

2010 (24)

  1. Zubiaga, A., Tuomisto, F., and Zuniga-Perez, J., Acceptor Type Vacancy Complexes In As-Grown ZnO, AIP Conference Proceedings 1292, pp. 217-220 (2010).
  2. Veternikova, J., Slugen, V., Degmova, J., Hinca, R., Sojak, S., Kilpeläinen, S., Tuomisto, F., Räisänen, J., and Krsjak, V., Comparison of T91 and P91 steels forseen for high temperature reactor using positron annihilation techniques, European Nuclear Conference 2010 Transactions, European Nuclear Society 2010, pp. 133-137 (2010).
  3. Veternikova, J., Degmova, J., Sojak, S., Kilpeläinen, S., Slugen, V., and Tuomisto, F., Radiation resistance of construction steels for high-temperature reactors, Proceedings of the 16th International Conference on Applied Physics of Condensed Matter 2010, pp. 125-129 (2010).
  4. Reurings, F., Tuomisto, F., Gallinat, C.S., Koblmüller, G., and Speck, J.S., In vacancies in InN grown by plasma-assisted molecular beam epitaxy, Applied Physics Letters 97, 251907 (2010).
  5. Reurings, F., Rauch, C., Tuomisto, F., Jones, R.E., Yu, K.M., Walukiewicz, W., and Schaff, W.J., Defect redistribution in post-irradiation rapid-thermal-annealed InN, Physical Review B 82, 153202 (2010). http://prb.aps.org/abstract/PRB/v82/i15/e153202
  6. Koblmüller, G., Reurings, F., Tuomisto, F., and Speck, J.S., Influence of Ga/N ratio on morphology, Ga vacancies and electrical transport in (0001) GaN grown by plasma-assisted molecular beam epitaxy at high temperature, Applied Physics Letters 97, 191915 (2010).
  7. Kilpeläinen, S., Kuitunen, K., Tuomisto, F., Slotte, J., Radamson, H.H., and Kuznetsov, A.Yu., Stabilization of Ge-rich defect complexes originating from E centers in SiGe:P, Physical Review B 81, 132103 (2010).
  8. Makkonen, I., Snicker, A., Puska, M.J., Mäki, J.-M., and Tuomisto, F., Positrons as interface-sensitive probes of polar semiconductor heterostructures, Physical Review B 82, 041307(R) (2010). http://link.aps.org/doi/10.1103/PhysRevB.82.041307
  9. Sane, P., Tuomisto, F., Vattulainen, I., and Holopainen, J., Revealing the Microstructural Changes in Tissues In-Situ with Positron Annihilation Spectroscopy, Biophysical Journal 98, 663a (2010).
  10. Venkatachalapathy, V., Galeckas, A., Zubiaga, A., Tuomisto, F., and Kuznetsov, A.Yu, Changing vacancy balance in ZnO by tuning synthesis between zinc/oxygen lean conditions, Journal of Applied Physics 108, 046101 (2010).
  11. Zubiaga, A., Plazaola, F., Garcia, J. A., Martinez-Tomas, C., Muñoz-Sanjose, V., Temperature- and illumination-induced charge-state change in divacancies of GaTe, Physical Review B 81, 195211 (2010).
  12. Sane, P., Tuomisto, F., Wiedmer, S.K., Nyman, T., Vattulainen, I., and Holopainen, J.M., Temperature-induced Structural Transition in-situ in Porcine Lens - Changes Observed in Void Size Distribution, Biochimica et Biophysica Acta - Biomembranes 1798, pp. 958-965 (2010).
  13. Rauch, C., Gehlhoff, W., Wagner, M. R., Malguth, E., Callsen, G., Kirste, R., Salameh, B., Hoffmann, A., Polarz, S., Aksu, Y., and Driess, M., Lithium related deep and shallow acceptors in Li-doped ZnO nanocrystals, Journal of Applied Physics 107, 024311 (2010). http://link.aip.org/link/?JAP/107/024311/1
  14. Tuomisto, F., Mäki, J.-M., Svensk., O., Törmä, P.T., Suihkonen, S., and Sopanen, M., Defect studies with positrons: what could we learn on III-nitride heterostructures?, Journal of Physics: Conference Series 225, 012057 (2010).
  15. Tuomisto, F., Mäki, J.-M., and Zajac, M., Vacancy defects in bulk ammonothermal GaN crystals, Journal of Crystal Growth 312, pp. 2620-2623 (2010).
  16. Rauch, C., Reurings, F., Tuomisto, F., Veal, T.D., McConville, C.F., Lu, H., Schaff, W.J., Gallinat, C.S., Koblmüller, G., Speck, J.S., Egger, W., Löwe, B., Ravelli, L., and Sojak, S., In-vacancies in Si-doped InN, Physica Status Solidi A 207, pp. 1083-1086 (2010). http://onlinelibrary.wiley.com/doi/10.1002/pssa.200983120/abstract
  17. Reurings, F., Tuomisto, F., Egger, W., Löwe, B., Ravelli, L., Sojak, S., Liliental-Weber, Z., Jones, R.E., Yu, K.M., Walukiewicz, W., and Schaff, W.J., Irradiation-induced defects in InN and GaN studied with positron annihilation, Physica Status Solidi A 207, pp. 1087-1090 (2010).
  18. Dong, Y., Tuomisto, F., Svensson, B.G., Kuznetsov, A.Yu., and Brillson, L.J., Vacancy defect and defect cluster energetics in ion-implanted ZnO, Physical Review B 81, 081201(R) (2010).
  19. Slotte, J., Kuitunen, K., Kilpeläinen, S., Tuomisto, F., and Capan, I., Divacancies at room temperature in germanium, Thin Solid Films 518, pp. 2314-2316 (2010).
  20. Yagodzinskyy, Y., Saukkonen, T., Kilpeläinen, S., Tuomisto, F., and Hänninen, H., Effect of hydrogen on plastic strain localization in single crystals of austenitic stainless steel, Scripta Materialia 62, pp. 155-158 (2010).
  21. Koskelo, O., Räisänen, J., Eversheim, D., Tuomisto, F., Grasza, K., and Mycielski, A., Diffusion of cobalt in ion-implanted ZnO, Thin Solid Films 518, pp. 3894-3897 (2010).
  22. Tuomisto, F., Point defects and impurities in bulk GaN studied by positron annihilation spectroscopy, in Technology of GaN Crystal Growth, Eds. D. Ehrentraut, E. Meissner, and M. Bockowski (Springer-Verlag, Berlin, 2010) 1st ed., Ch. 14 (2010).
  23. Tuomisto, F., Characterization of vacancy defects in ZnO by positron annihilation spectroscopy, in Zinc Oxide the Future Material for Electronics: A Comprehensive Review on ZnO Physics and Defects, Ed. F. Selim (Research Signpost, Kerala, 2010) 1st ed., Ch. 4 (2010).
  24. Tuomisto, F., Defect characterization in semiconductors with positron annihilation spectroscopy, in Springer Handbook of Crystal Growth, Defects and Characterization, Eds. G. Dhanaraj, K. Byrappa, V. Prasad, and M. Dudley (Springer-Verlag, New York, 2010) 1st ed., Ch. 46 (2010).

2009 (16)

  1. Neuvonen, P.T., Vines, L., Kuznetsov, A.Yu., Svensson, B.G., Du, X., Tuomisto, F., and Hallén, A., Interaction Between Na and Li in ZnO, Applied Physics Letters 95, 242111 (2009).
  2. Sane, P., Tuomisto, F., Vattulainen, I., Salonen, E., and Holopainen, J. M., Probing The Microstructure Of Biomaterials With Positrons, Biophysical Journal 96, 356a (2009).
  3. Wagner, M. R., Schulze, J., Kirste, R., Corbet, M., Hoffmann, A., Rauch, C., Rodina, A. V., Meyer, B. K., Röder, U., Thonke, K., Gamma 7 valence band symmetry related hole fine splitting of bound excitons in ZnO observed in magneto-optical studies, Physical Review B 80, 205203 (6 pages) (2009). http://prb.aps.org/abstract/PRB/v80/i20/e205203
  4. Polarz, S. , Orlov, A., Hoffmann, A., Wagner, M. R., Rauch, C., Kirste, R., Gehlhoff, W., Aksu, Y., Driess, M., van den Berg, M. W. E., Lehmann, M., A Systematic Study on Zinc Oxide Materials Containing Group I Metals (Li, Na, K) - Synthesis from Organometallic Precursors, Characterization, and Properties, Chemistry of Materials 21, 3889-3897 (2009). http://pubs.acs.org/doi/abs/10.1021/cm9014223
  5. Biniukova, S.Yu., Ganchenkova, M.G., Kilpeläinen, S., Tuomisto, F., and Chernov, I.I., Effect of carbon on vacancy defect concentration in model iron alloys, Perspektivnyje materialy No. 6, pp. 49-56 (2009).
  6. Mäki, J.-M., Tuomisto, F., Kelly, C.J., Fisher, D., and Martineau, P.M., Properties of optically active vacancy clusters in type IIa diamond, Journal of Physics: Condensed Matter 21, 364216:1-10 (2009).
  7. Ramani, R., Valkama, S., Kilpeläinen, S., Tuomisto, F., ten Brinke, G., Ruokolainen, J., Alam, S., and Ikkala, O., Order-disorder transitions in self-assembled polymers: A positron annihilation study, Physica Status Solidi (C) 6, 2414-2416 (2009). http://dx.doi.org/10.1002/pssc.200982079
  8. Kilpeläinen, S., Kuitunen, K., Slotte, J., Tuomisto, F, Borot, G., Rubaldo, L., Clément, L., Pantel, R., and Dutartre, D., Defect characterization of heavily As and P doped Si epilayers, Physica Status Solidi (c) 6, pp. 2537-2539 (2009).
  9. Mäki, J.-M., Tuomisto, F., Bastek, B., Bertram, F., Christen, J., Dadgar, A., Krost, A., Effect of growth conditions on vacancy defects in MOVPE grown AlN thin layers, Physica Status Solidi (c) 6, pp. 2575-2577 (2009).
  10. Koskelo, O., Räisänen, J., Tuomisto, F., Sadowski, J., and the ISOLDE collaboration, The effect of a material growth technique on ion implanted Mn diffusion in GaAs, Semiconductor Science and Technology 24, 045011 (2009).
  11. Sane, P., Salonen, E., Falck, E., Repakova, J., Tuomisto, F., Holopainen, J., and Vattulainen, I., Probing biomembranes with positrons, Journal of Physical Chemistry B 113, pp. 1810-1812 (2009).
  12. Kilpeläinen, S., Kuitunen, K., Tuomisto, F., Slotte. J., Bruno, E., Mirabella, S., and Priolo, F., Vacancy Engineering by He Induced Nanovoids in Crystalline Si, Semiconductor Science and Technology 24, 015005 (2009).
  13. Reurings, F., Tuomisto, F., Koblmüller, G., Gallinat, C.S., and Speck, J.S., Vacancy defects probed with positron annihilation spectroscopy in In-polar InN grown by plasma-assisted molecular beam epitaxy: Effects of growth conditions, Physica Status Solidi (c) 6, pp. S401-S404 (2009).
  14. Sane, P., Kilpeläinen, S., and Tuomisto, F., 4-channel digital positron lifetime spectrometer for studying biological samples, Materials Science Forum 607, pp. 254-256 (2009).
  15. Kilpeläinen, S., Kuitunen, K., Slotte, J., Tuomisto, F, Bruno, E., Mirabella, S., and Priolo, F., He Implantation Induced Nanovoids in Crystalline Si, Materials Science and Engineering B 159-160, pp. 164-167 (2009).
  16. Kilanski, L., Zubiaga, A., Tuomisto, F., Dobrowolski, W., Domukhovski, V., Varnavskiy, S., and Marenkin, S.F., Native vacancy defects in Zn1-x(Mn,Co)xGeAs2 studied with positron annihilation spectroscopy, Journal of Applied Physics 106, 013524 (2009).

2008 (16)

  1. Zubiaga, A., Tuomisto, F., Zuniga-Perez, J., and Munoz-Sanjose, V., Characterization of non-polar ZnO layers with positron annihilation spectroscopy, Acta Physica Polonica A 114, pp. 1457-1464 (2008).
  2. Kuitunen, K., Kilpeläinen, S., Slotte, J., and Tuomisto, F., E center annealing in SiGe: stability and charge states, Materials Science and Engineering B 154-155, pp. 141-143 (2008).
  3. Zubiaga, A., Tuomisto, F., Coleman, V.A., Tan, H.H., Jagadish, C., Koike, K., Sasa, S., Inoue, M., and Yano, M., Mechanisms of electrical isolation in O+-irradiated ZnO, Physical Review B 78, 035125 (2008).
  4. Slotte, J., Rummukainen, M., Tuomisto, F., Markevich, V.P., Peaker, A.R., Jeynes, C., and William, R., Evolution of vacancy-related defects upon annealing of ion-implanted germanium, Physical Review B 78, 085202 (2008).
  5. Kuitunen, K., Tuomisto, F., Slotte, J., Capan, I., Divacancy clustering in neutron irradiated and annealed n-type germanium, Physical Review B 78, 033202 (2008).
  6. Zubiaga, A., Garcia, J. A., Plazaola, F., Muñoz-Sanjose, V., Martinez-Tomas, C., Thermal Creation of Defects in GaTe, Japanese Journal of Applied Physics 47, 8719 (2008).
  7. Paskova, T., Hanser, A., Preble, E., Evans, K., Kroeger, R., Tuomisto, F., Kersting, R., Alcorn, R., Ashley, S., Pagel, C., Valcheva, E., Paskov, P.P., and Monemar, B., Defect and emission distributions in bulk GaN grown in polar and nonpolar directions: a comparative analysis, Proc. SPIE 6894, 68940D (2008).
  8. Tuomisto, F., Mäki, J.-M., Chemekova, T.Yu., Makarov, Yu.N., Avdeev, O.V., Mokhov, E.N., Segal, A.S., Ramm, M.G., Davis, S., Huminic, G., Helava, H., Bickermann, M., and Epelbaum, B.M., Characterization of bulk AlN crystals with positron annihilation spectroscopy, Journal of Crystal Growth 310, pp. 3998-4001 (2008).
  9. Peaker, A.R., Markevich, V.P., Slotte, J., Kuitunen, K., Tuomisto, F., Satta, A., Simoen, E., Capan, I., Pivac, B., and Jacimovic, R., Vacancy Clusters in Germanium, Solid State Phenomena 131-133, pp. 125-130 (2008).
  10. Ramani, R., Hanski, S., Laiho, A., Tuma, R., Kilpeläinen, S., Tuomisto, F., Ruokolainen, J., and Ikkala, O., Evidence of PPII-like helical conformation and glass transition in a self-assembled solid-state polypeptide−surfactant complex: Poly(L-histidine)/Dodecylbenzenesulfonic acid, Biomacromolecules 9, pp. 1390-1397 (2008). http://dx.doi.org/10.1021/bm7012845
  11. Svensson, B.G., Moe Børseth, T., Johansen, K.M., Maqsood, T., Schifano, R., Grossner, U., Christensen, J.S., Vines, L., Klason, P., Zhao, Q.X., Willander, M., Tuomisto, F., Skorupa, W., Monakhov, E.V., and Kuznetsov, A.Yu., Hydrothermally grown single-crystalline zinc oxide; characterization and modification, Materials Research Society Symposium Proceedings 1035, L04-01 (2008).
  12. Tuomisto, F., Vacancy profiles and clustering in light ion implanted GaN and ZnO, Applied Surface Science 255, pp. 54-57 (2008).
  13. Zubiaga, A., Tuomisto, F., Coleman, V.A., and Jagadish, C., Vacancy defects in ZnO irradiated with 2 MeV O+, Applied Surface Science 255, pp. 234-236 (2008).
  14. Peaker, A.R., Markevich, V.P., Hamilton, B., Hawkins, I.D., Slotte, J., Kuitunen, K., Tuomisto, F.,Satta, A., Simoen, E., and Abrosimov, N., Implantation Defects and n-type Doping in Ge and Ge rich SiGe, Thin Solid Films 517, pp. 152-154 (2008).
  15. Bruno, E., Mirabella, S., Priolo, F., Kuitunen, K., Tuomisto, F., Slotte, J., Giannazzo, F., Bongiorno, C., Raineri, V., and Napolitani, E., He implantation to control B diffusion in crystalline and preamorphized Si, Journal of Vacuum Science and Technology B 26, 386-390 (2008).
  16. Moe Børseth, T., Tuomisto, F., Christensen, J.S., Monakhov, E.V., Svensson, B.G., and Kuznetsov, A.Yu., Vacancy clustering and acceptor activation in nitrogen-implanted ZnO, Physical Review B 77, 045204 (2008).

2007 (25)

  1. La Magna, A., Privitera, V., Mannino, G., Fortunato, G., Cuscuna, M., Svensson, B.G., Monakhov, E., Kuitunen, K., Slotte, J., and Tuomisto, F., Defect Generation and Evolution in Laser Processing of Si, Proceedings of the 15th International Conference on Advanced Thermal Processing of Semiconductors (IEEE) 2007, pp. 245-250 (2007).
  2. Tuomisto, F., Defect studies in HVPE GaN by positron annihilation spectroscopy, Proc. SPIE 6473, 647312 (2007).
  3. Tuomisto, F., and Look, D.C., Vacancy defect distributions in bulk ZnO crystals, Proc. SPIE 6474, 647413 (2007).
  4. Reurings, F., and Tuomisto, F., Interplay of Ga vacancies, C impurities, and yellow luminescence in GaN, Proc. SPIE 6473, 64730M (2007).
  5. Tuomisto, F., Look, D.C., and Farlow, G.C., Defect studies in electron irradiated ZnO and GaN, Physica B 401-402, pp. 604-608 (2007).
  6. Mäki, J.-M., Tuomisto, F., Kelly, C., Fisher, D., Martineau, P.M., Twitchen, D., and Woollard, S., Effects of thermal treatment on optically active vacancy defects in CVD diamonds, Physica B 401-402, pp. 613-616 (2007).
  7. Borot, G., Rubaldo, L., Clement, L., Pantel, R., Kuitunen, K., Slotte, J., Tuomisto, F., Mescot, X., Gri, M., Ghibaudo, G., and Dutartre, D., Tensile strain in arsenic heavily-doped Si, Journal of Applied Physics 102, 103505 (2007).
  8. Kuitunen, K., Tuomisto, F., Slotte, J., Evidence of a second acceptor state of the E center in Si(1-x)Ge(x), Physical Review B (BR) 76, 233202 (2007).
  9. Tuomisto, F., Ranki, V., Look, D.C., and Farlow, G.C., Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN, Physical Review B 76, 165207:1-10 (2007).
  10. Slotte, J., Gonzalez Debs, M., Kuech, T. F., and Cederberg J., The influence of substrate doping and point defects on Al and Ga interdiffusion in AlSb/GaSb superlattice structures, Journal of Applied Physics 102, 023511 (2007).
  11. Tuomisto, F., Pelli, A., Yu, K.M., Walukiewicz, W., and Schaff, W.J., Compensating point defects in He-irradiated InN, Physical Review B 75, 193201 (2007).
  12. Tuomisto, F., Paskova, T., Kröger, R., Figge, S., Hommel, D., Monemar, B., and Kersting, R., Defect distribution in a-plane GaN on Al2O3, Applied Physics Letters 90, 121915 (2007).
  13. La Magna, A., Privitera, V., Fortunato, G., Cuscuna, M., Svensson, B.G., Monakhov, E., Kuitunen, K., Slotte, J., and Tuomisto, F., Vacancy generation in liquid phase epitaxy of Si, Physical Review B 75, 235201 (2007).
  14. Slotte, J., Tuomisto, F., Saarinen, K., Moe, C.G., Keller, S., and DenBaars, S.P., Influence of silicon doping on vacancies and optical properties of Al(x)Ga(1-x)N thin films, Applied Physics Letters 90, 151908 (2007).
  15. Zubiaga, A., Garcia, J.A., Plazaola, F., Tuomisto, F., Zuniga-Perez, J., and Munoz-San Jose, V., Positron annihilation spectroscopy for the determination of the thickness and defect profile in thin semiconductor layers, Physical Review B 75, 205305 (2007).
  16. Väyrynen, S., Pusa, P., Sane, P., Tikkanen, P., Räisänen, J., Kuitunen, K., Tuomisto, F., Härkönen, J., Kassamakov, I., Tuominen, E., and Tuovinen, E., Setup for irradiation and characterization of materials and Si particle detectors, Nuclear Instruments and Methods in Physics Research A 572, pp. 978-984 (2007).
  17. Zubiaga, A., Plazaola, F., Garcia, J.A., Tuomisto, F., Munoz-San Jose, V., and Tena-Zaera, R., Positron annihilation lifetime spectroscopy of ZnO bulk samples, Physical Review B 76, 085202 (2007).
  18. Zubiaga, A., Garcia, J.A., Plazaola, F., Tuomisto, F., Zuniga-Perez, J., and Munoz-San Jose, V., New method for the determination of the defect profile in thin layers grown over a substrate, physica status solidi (c) 4, pp. 3973-3976 (2007).
  19. Reurings, F. and Laakso, A., Analysis of the time resolution of a pulsed positron beam, Physica Status Solidi (c) 4, pp. 3965-3968 (2007). http://dx.doi.org/10.1002/pssc.200675745
  20. Kuitunen, K., Saarinen, K., and Tuomisto, F., Positron trapping kinetics in thermally generated vacancy donor complexes in highly As-doped silicon, Physical Review B 75, 045210 (2007).
  21. Valkama, S., Nykänen, A., Kosonen, H., Ramani, R., Tuomisto, F., Engelhardt, P., ten Brinke, G., Ikkala, O., and Ruokolainen, J., Hierarchical Porosity in Self-Assembled Polymers: Post-Modification of Block Copolymer-Phenolic Resin Complexes by Pyrolysis Allows the Control of Micro- and Mesoporosity, Advanced Functional Materials 17, pp. 183-190 (2007).
  22. Tuomisto, F., Paskova, T., Figge, S., Hommel, D., and Monemar, B., Vacancy defect distribution in heteroepitaxial a-plane GaN grown by hydride vapor phase epitaxy, Journal of Crystal Growth 300, pp. 251-253 (2007).
  23. Tuomisto, F., Mycielski, A., and Grasza, K., Vacancy defects in (Zn,Mn)O, Superlattices and Microstructures 42, pp. 218-221 (2007).
  24. Pas, S.J., Tuomisto, F., Saarinen, K., Ammala, A., Turney, T.W., and Hill, A.J., Stabiliser Distribution and Efficiency Examined by Depth Profiling Polypropylene Using a Positron Beam, Surface Science 601, pp. 5750-5756 (2007).
  25. Aavikko, R., Saarinen, K., Tuomisto, F., Magnusson, B., Son, N. T., Janzen, E., Clustering of vacancy defects in high-purity semi-insulating SiC, Physical Review B 75, 085208 (2007).

2006 (26)

  1. Lee, K., VanMil, B., Luo, M., Myers, T.H., Armstrong, A., Ringel, S.A., Rummukainen, M., and Saarinen, K., Compensation in Be-doped Gallium Nitride Grown Using Molecular Beam Epitaxy, Materials Research Society Symposium Proceedings 892, FF28-13 (2006).
  2. Slotte, J., Positron annihilation spectroscopy of vacancy complexes in SiGe, Nuclear Instruments and Methods in Physics Research B 253, 130-135 (2006).
  3. Moe Børseth, T., Tuomisto, F., Christensen, J.S., Skorupa, W., Monakhov, E.V., Svensson, B.G., and Kuznetsov, A.Yu., Deactivation of Li by vacancy clusters in ion implanted and flash-annealed ZnO, Physical Review B 74, 161202(R) (2006).
  4. Pavelescu, E.-M., Slotte, J., Dhaka, V.D.S., Saarinen, K., Antohe, S., Cimpoca, Gh., Pessa, M., On the optical crystal properties of quantum-well GaIn(N)As/GaAs semiconductors grown by molecular-beam epitaxy, Journal of Crystal Growth 297, 33-37 (2006).
  5. Slotte, J., Saarinen, K., Pavelescu, E.-M., Hakkarainen, T., and Pessa, M., Nitrogen related vacancies in GaAs based quantum well superlattices, Applied Physics Letters 89, 061903 (2006).
  6. Tengborn, E., Rummukainen, M., Tuomisto, F., Saarinen, K., Rudzinski, M., Hageman, P.R., Larsen, P.K., and Nordlund, A., Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal organic chemical vapour deposition, Applied Physics Letters 89, 091905 (2006).
  7. Pelli, A., Saarinen, K., Tuomisto, F., Ruffenach, S., Briot, O., Influence of V/III molar ratio on the formation of In vacancies in InN grown by metal-organic vapor-phase epitaxy, Applied Physics Letters 89, 011911 (2006).
  8. Slotte, J., Saarinen, K., Ebert, Ph., Formation of V_P-Zn complexes in bulk InP(Zn) by migration of P vacancies from the (110) surface, Physical Review B 73, 193313 (2006).
  9. Rummukainen, M., Slotte, J., Saarinen, K., Radamson, H.H., Hållstedt, J., and Kuznetsov, A.Yu., Vacancy-impurity pairs in relaxed Si_1-xGe_x layers studied by positron annihilation spectroscopy, Physical Review B 73, 165209 (2006).
  10. Gogova, D., Siche, D., Fornari, R., Monemar, B., Gibart, P., Dobos, L., Pecz, B., Tuomisto, F., Bayazitov, R., and Zollo, G., Optical and structural studies of high-quality bulk-like GaN grown by HVPE on a MOVPE AlN buffer layer, Semiconductor Science and Technology 21, pp. 702-708 (2006).
  11. Paskova, T., Hommel, D., Paskov, P.P., Darakchieva, V., Monemar, B., Bockowski, M., Suski, T., Grzegory, I., Tuomisto, F., Saarinen, K., Ashkenov, N., and Schubert, M.,, Effect of high-temperature annealing on the residual strain and bending of free-standing GaN films grown by hydride vapor phase epitaxy, Applied Physics Letters 88, 141909 (2006).
  12. Saarinen, K., Hautakangas, S., and Tuomisto, F., Dominant intrinsic acceptors in GaN and ZnO, Physica Scripta T126, pp. 105-109 (2006).
  13. Tuomisto, F., Saarinen, K., Grasza, K., and Mycielski, A., Observation of Zn vacancies in ZnO grown by chemical vapor transport, physica status solidi (b) 243, pp. 794-798 (2006).
  14. Zubiaga, A., Garcia, J.A., Plazaola, F., Tuomisto, F., Saarinen, K., Zuniga-Perez, J., and Munoz-Sanjose, V., Correlation between Zn vacancies and photoluminescence emission in ZnO films, Journal of Applied Physics 99, 053516:1-6 (2006).
  15. Tuomisto, F., Saarinen, K., Paskova, T., Monemar, B., Bockowski, M., and Suski, T., Thermal stability of in-grown vacancy defects in GaN grown by hydride vapor phase epitaxy, Journal of Applied Physics 99, 066105 (2006).
  16. Tuomisto, F., Hautakangas, S., Makkonen, I., Ranki, V., Puska, M.J., Saarinen, K., Bockowski, M., Suski, T., Paskova, T., Monemar, B., Xu, X., and Look, D.C., Dissociation of VGa-ON complexes in HVPE GaN by high pressure and high temperature annealing, physica status solidi (b) 243, pp. 1436-1440 (2006).
  17. Monemar, B., Paskov, P.P., Tuomisto, F., Saarinen, K., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I., and Kimura, S., Dominant shallow acceptor enhanced by oxygen doping in GaN, Physica B 376-377, pp. 440-443 (2006).
  18. Hautakangas, S., Ranki, V., Makkonen, I., Puska, M. J., Saarinen, K., Liszkay, L., Seghier, D., Gislason, H. P., Freitas, J. A., Jr., Henry, R. L., Xu, X., Look, D. C., Gallium and nitrogen vacancies in GaN: Impurity decoration effects, Physica B 376-377, pp. 424-427 (2006).
  19. Rummukainen, M., Slotte, J., Saarinen, K., Radamson, H.H., Hållstedt, J., and Kuznetsov, A.Yu., Vacancy-impurity pairs in n-type Si_1-xGex studied by positron spectroscopy, Physica B 376-377, pp. 208-211 (2006).
  20. Slotte, J., Saarinen, K., Hakkarainen, T., Pavelescu, E. ? M., Karirinne, Jouhti, S. T. and Pessa, M., Nitrogen related vacancy formation in annealed GaInNAs quantum well superlattices, Physica B 376-377, pp. 857-860 (2006).
  21. Pennanen, K., Ranki, V., and Saarinen, K., Positron trapping at thermal vacancies in highly As-doped Si, Physica B 376-377, pp. 189-192 (2006).
  22. Scholes, F.H., Furman, S.A., Hughes, A.E., Hill, A.J., Tuomisto, F., Saarinen, K, and Pas, S.J., Characterisation of a Chromate-Inhibited Primer By Doppler Broadening Energy Spectroscopy, Journal of Coatings Technology 3, pp. 105-108 (2006).
  23. Hautakangas, S., Ranki, V., Makkonen, I., Puska, M. J., Saarinen, K., Xu, X., Look, D.C., Direct evidence of impurity decoration of Ga vacancies in GaN from positron annihilation spectroscopy, Physical Review B 73, 193301 (2006).
  24. Reurings, F., Laakso, A., Rytsölä, K., Pelli, A., and Saarinen, K., Compact positron beam for measurement of transmission moderator efficiencies and positron yields of encapsulated sources, Applied Surface Science 252, pp. 3154-3158 (2006). http://dx.doi.org/10.1016/j.apsusc.2005.08.066
  25. Pelli, A., Laakso, A., Rytsölä, K., and Saarinen, K., The design of the main accelerator for a pulsed positron beam, Applied Surface Science 252, 3143-3147 (2006). http://dx.doi.org/10.1016/j.apsusc.2005.08.054
  26. Laakso, A., Pelli, A., Rytsölä, K., Saarinen, K., Hautojärvi, P., Determination of the timing properties of the pulsed positron lifetime beam by the application of an electron gun and a fast microchannel plate, Applied Surface Science 252, pp. 3148-3153 (2006). http://dx.doi.org/10.1016/j.apsusc.2005.08.057

2005 (14)

  1. Paskova, T., Suski, T., Bockowski, M., Paskov, P.P., Darakchieva, V., Monemar, B., Tuomisto, F., Saarinen, K., Ashkenov, N., Schubert, M., Roder, C., and Hommel, D., High pressure annealing of HVPE GaN free-standing films: redistribution of defects and stress, Materials Research Society Symposium Proceedings 831, E8.18 (2005).
  2. Monemar, B., Paskov, P.P., Tuomisto, F., Saarinen, K., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I., and Kimura, S., Oxygen related shallow acceptor in GaN, Materials Research Society Symposium Proceedings 831, E5.10 (2005).
  3. Haaks, M., Staab, T. E. M., Saarinen, K., Maier, K., Chemical sensitivity in positron annihilation with just one single Ge detector, Physica Status Solidi (a) 202, R38 (2005).
  4. Hautakangas, S., Saarinen K., Liszkay, L., Freitas, J. A. Jr., Henry, R. L., The role of open volume defects in Mg-doped GaN studied by positron annihilation spectroscopy, Physical Review B 72, 165303 (2005).
  5. Tuomisto, F., Saarinen, K., Look, D.C., and Farlow, G.C., Introduction and recovery of point defects in electron-irradiated ZnO, Physical Review B 72, 085206 (2005).
  6. Gogova, D., Hemmingsson, C., Monemar, B., Talik, E., Kruczek, M., Tuomisto, F., and Saarinen, K., Investigation of the structural and optical properties of free-standing GaN grown by HVPE, Journal of Physics D: Applied Physics 38, 2332-2337 (2005).
  7. Aavikko R., Rytsölä K., Nissilä J. Saarinen K., Stability and Performance Characteristics of a Digital Positron Lifetime Spectrometer, Acta Physica Polonica A 107, pp. 592-597 (2005).
  8. Tuomisto, F., Saarinen, K., Lucznik, B., Grzegory, I., Teisseyre, H., Suski, T., Porowski, S., Hageman, P.R., and Likonen, J., Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN, Applied Physics Letters 86, 031915 (2005).
  9. Paskova, T., Arnaudov, B., Paskov, P. P., Goldys, E. M., Hautakangas, S., Saarinen, K., Söderval, U., and Monemar, B., Donor-acceptor pair emission enhancement in mass-transport-grown GaN, Journal of Applied Physics 98, 033508 (2005).
  10. Slotte, J., Janson, M. S., Saarinen, K., Kuznetsov, A. Yu., Hallén, A., Wong-Leung, J., Jagadish, C., and Svensson, B. G., Fluence, flux and implantation temperature dependence of ion implantation induced defect production in 4H-SiC, Journal of Applied Physics 97, 033513 (2005).
  11. Zubiaga, A., Tuomisto, F., Plazaola, F., Saarinen, K., Garcia, J.A., Rommeluere, J.F., Zuniga-Perez, J., and Munoz-San Jose, V., Zinc vacancies in the heteroepitaxy of ZnO on sapphire: influence of the substrate orientation and layer thickness, Applied Physics Letters 86, 042103 (2005).
  12. Rummukainen, M., Makkonen, I., Ranki, V. , Puska, M. J., Saarinen, K., and Gossmann, H.-J. L., Vacancy-Impurity Complexes in Highly Sb-Doped Si Grown by Molecular Beam Epitaxy, Physical Review Letters 94, 165501 (2005).
  13. Nissilä J., Rytsölä K., Aavikko R. Laakso A., Saarinen K., Hautojärvi P., Performance analysis of a digital positron lifetime spectrometer, Nuclear Instruments and Methods in Physics Research A 538, 778-789 (2005). http://dx.doi.org/10.1016/j.nima.2004.08.102
  14. Aavikko R., Saarinen K., Magnusson B., Janzén E., Observation of Vacancy Clusters in HTCVD Grown SiC, Materials Science Forum 483-485, 469-472 (2005).

2004 (15)

  1. Liliental-Weber, Z., Tomaszewicz, T., Zakharov, D., Jasinski, J., O?Keefe, M. A., Hautakangas, S., Laakso, A., and Saarinen, K., Atomic Structure of Defects in GaN:Mg Grown with Ga Polarity, Materials Research Society Symposium Proceedings 798, Y9.7 (2004).
  2. Ranki, V., Saarinen, K., Formation of thermal vacancies in highly As and P doped Si, Physical Review Letters 93, 255502 (2004).
  3. Paskova, T., Paskov, P. P., Goldys, E. M., Valcheva, E., Darakchieva, V., Söderval, U., Godlewski, M., Zielinski, M., Hautakangas, S., Saarinen, K., Carlström, C. F., Wahab, Q., and Monemar, B., Characterization of mass-transport grown GaN by hydride vapour phase epitaxy, Journal of Crystal Growth 273, pp. 118-128 (2004).
  4. Tuomisto, F., Pennanen, K., Saarinen, K., and Sadowski, J., Ga Sublattice Defects in (Ga,Mn)As: Thermodynamical and Kinetic Trends, Physical Review Letters 93, 055505 (2004).
  5. Gogova, D., Kasic, A., Larsson, H., Monemar, B., Tuomisto, F., Saarinen, K., Dobos, L., Pécz, B., Gibart, P., and Beaumont, B., Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template, Journal of Applied Physics 96, pp. 799-806 (2004).
  6. Tuomisto, F., Saarinen, K., and Look, D.C., Irradiation-induced defects in ZnO studied by positron annihilation spectroscopy, physica status solidi (a) 201, pp. 2219-2224 (2004).
  7. Laakso, A., Oila, J., Kemppinen, A., Saarinen, K., Egger, W., Liszkay, L., Sperr, P., Lu, H., and Schaff, W. J., Vacancy defects in epitaxial InN: Identification and electrical properties, Journal of Crystal Growth 269, pp. 41-49 (2004). http://dx.doi.org/10.1016/j.jcrysgro.2004.05.032
  8. Rummukainen, M., Oila, J., Laakso, A., Saarinen, K., Ptak, A. J., and Myers, T. H., Vacancy defects in O-doped GaN grown by molecular beam epitaxy: The role of growth polarity and stoichiometry, Applied Physics Letters 84, 4887 (2004). http://link.aip.org/link/?APPLAB/84/4887/1
  9. Gogova, D., Kasic, A., Larsson, H., Pecz, B., Yakimova, R., Magnusson, B., Monemar, B., Tuomisto, F., Saarinen, K., Miskys, C., Stutzmann, M., Bundesmann, C., and Schubert, M., Optical and Structural Characteristics of Virtually Unstrained Bulk-Like GaN, Japanese Journal of Applied Physics 43, pp. 1264-1268 (2004).
  10. Ranki, V., Pelli, A. and Saarinen, K., Formation of vacancy-impurity complexes by annealing of the elementary vacancies introduced by electron irradiation of As, P and Sb doped Si, Physical Review B 69, 115205 (2004).
  11. Janson, M. S., Slotte, J., Kuznetsov, A. Yu, Saarinen, K., Hallen, A., Vacancy related defect distributions in B-11, N-14 and Al-27 implanted 4H-SiC: The role of channeling, Journal of Applied Physics 95, 57-63 (2004).
  12. Laakso, A., Hakala, M. O., Pelli, A., Rytsölä, K., Saarinen, K., Scattering effects in a positron lifetime beam line, Materials Science Forum 445, 489 (2004). http://lib.tkk.fi/Diss/2005/isbn9512277468/article2.pdf
  13. Pelli, A., Laakso, A., Rytsölä, K., Aavikko R., Rummukainen M., Saarinen, K., HV design of a pulsed lifetime beam with a grounded sample, Materials Science Forum 445, 504 (2004). http://lib.tkk.fi/Diss/2005/isbn9512277468/article4.pdf
  14. Aavikko R., Rytsölä K., Nissilä J., Linearity tests of a Digital Positron Lifetime Spectrometer, Materials Science Forum 445-446, pp. 462-464 (2004).
  15. Oila, J., Kemppinen, A., Laakso, A., Saarinen, K., Egger, W., Liszkay, L., Sperr, P., Lu, H., Schaff, W. J., Influence of layer thickness on the formation of In vacancies in InN grown by molecular beam epitaxy, Appl. Phys. Lett. 84, 1486 (2004). http://link.aip.org/link/?APPLAB/84/1486/1

2003 (18)

  1. Slotte, J., Saarinen, K., Salmi, A., Simula, S., Aavikko, R., and Hautojärvi, P., Formation of vacancy-impurity complexes in heavily Zn-doped InP, Physical Review B 67, 115209 (2003).
  2. Look, D. C., Sizelove, J. R., Jasinski, J., Liliental-Weber, Z., Saarinen, K., Park, S. S., Han, J. H., , optical, structural, and analytical properties of very pure GaN, Materials Research Society Symposium Proceedings 743, L10.1 (2003).
  3. Janson, M. S., Slotte, J., Kuznetsov, A. Yu., Saarinen, K., and Hallén, A., Vacancy-type defect distributions of (11)B-, (14)N and (27)Al-implanted 4H-SiC studied by positron annihilation spectroscopy, Materials Science Forum 433-436, 641-644 (2003).
  4. Ranki, V. and Saarinen, K., Formation of vacancy-impurity complexes in highly As and P doped Si, Physica B 340-342, 765-768 (2003).
  5. Slotte, J., Sihto, S.-L., Lento, J., Monakhov, E. V., Kuznetsov, A. Yu, Saarinen, K., Svensson, B. G., Identification of phosphorus-vacancy complexes in strained SiGe, Physica B 340, 849 (2003). http://dx.doi.org/10.1016/j.physb.2003.09.112
  6. Tuomisto, F., Ranki, V., Saarinen, K., Look, D.C., Evidence of the Zn vacancy acting as the dominant acceptor in n-type ZnO, Physical Review Letters 91, 205502 (2003).
  7. Tuomisto, F., Slotte, J., Saarinen, K., Sadowski, J., Observation of vacancies in Ga(1-x)Mn(x)As with positron annihilation spectroscopy, Acta Physica Polonica A 103, pp. 601-606 (2003).
  8. Saarinen, K., and Ranki, V., Identification of vacancy complexes in Si by positron annihilation, J. Phys.: Condens. Matter 15, 2791 (2003).
  9. Tuomisto, F., Suski, T., Teisseyre, H., Krysko, M., Leszczynski, M., Lucznik, B., Grzegory, I., Porowski, S., Wasik, D., Witowski, A., Gebicki, W., Hageman, P., and Saarinen, K., Polarity dependent properties of GaN layers grown by hydride vapor phase epitaxy on GaN bulk crystals, physica status solidi (b) 240, pp. 289-292 (2003).
  10. Plazaola, F., Flyktman, J., Saarinen, K., Dobrzynski, L., Firszt, F., Legowski, S., Meczynska, H., Paszkowicz, W., Reniewicz, H., Defect characterization of ZnBeSe mixed crystals by means of positron annihilation and photoluminescence techniques, J. Appl. Phys. 94, 1647 (2003).
  11. Hautakangas, S., Oila, J., Alatalo, M., Saarinen, K., Liszkay, L., Seghier, D., Gislason, H. P., Vacancy defects as compensating centers in Mg-doped GaN, Physical Review Letters 90, 137402 (2003).
  12. Oila, J., Kivioja, J., Ranki, V., Saarinen, K., Look, D. C., Molnar, R. J., Park, S. S., Lee, S. K., Han, J. Y., Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy, Applied Physics Letters 82, 3422 (2003).
  13. Sihto, S.-L., Slotte, J., Lento, J., Saarinen, K., Monakhov, E.V., Kuznetsov, A. Yu., Svensson, B.G., Vacancy-phosphorus complexes in strained Si{1-x}Ge{x}: Structure and stability, Physical Review B 68, 115307 (2003).
  14. Armitage, R., Hong, W., Qing Yang, Gebauer, J., Weber, E. R., Hautakangas, S., Saarinen K., Contributions from gallium vacancies and carbon-related defects to the yellow luminescence in GaN, Applied Physics Letters 82, 3457 (2003).
  15. Oila, J., Saarinen, K., Wickenden, A. E., Koleske, D. D., Henry, R. L., Twigg, M. E., Ga vacancies and grain boundaries in GaN, Applied Physics Letters 82, 1021 (2003).
  16. Ranki, V., Saarinen, K., Fage-Pedersen, J., Lundsgaard Hansen, J., and Nylandsted Larsen, A., Electrical deactivation by vacancy-impurity complexes in highly As-doped Si, Physical Review B 67, 041201 (2003).
  17. Toivonen, J., Hakkarainen, T., Sopanen, M., Lipsanen, H., Oila, J., and Saarinen, K., Observation of defect complexes containing Ga vacancies in GaAsN, Applied Physics Letters 82, 40-42 (2003).
  18. Dekker, J., Saarinen, K., Olafsson, H., and Sveinbjörnsson, E., Observation of interface defects in thermally oxidized SiC using positron annihilation, Applied Physics Letters 82, 2020 (2003).

2002 (10)

  1. Dekker, J., Saarinen, K., Olafsson, H., Sveinbjörnsson, E., Positron annihilation studies of defects at the SiO2/SiC interface, Materials Science Forum 433-436, 543 (2002).
  2. Saarinen, K., Ranki, V., Suski, T., Bockowski, M., and Grzegory, I., Vacancies as compensating centers in bulk GaN: Doping effects, Journal of Crystal Growth 246, 281-286 (2002).
  3. Arpiainen, S., Saarinen, K., Hautojärvi, P., Henry, L., Barthe, M.-F., and C. Corbel, C., Optical transitions of silicon vacancy in 6H-SiC studied by positron annihilation spectroscopy, Physical Review B 66, 075206 (2002).
  4. Laukkanen, P., Lehkonen, S., Uusimaa, P., Pessa, M., Oila, J., S. Hautakangas, S., Saarinen, K., Likonen, J., and J. Keränen, J., Structural, electrical and optical properties of defects in Si-doped GaN grown by molecular beam epitaxy on HVPE GaN, Journal of Applied Physics 92, 786 (2002).
  5. Dekker, J., Oila, J., Saarinen, K., Tukiainen, A., Wei Li, Pessa, M., Cation and anion vacancies in proton irradiated n-GaInP, Journal of Applied Physics 92, 5942-5949 (2002).
  6. Dekker, J., Aavikko, R., and Saarinen, K., Characterization of superlattices using positron annihilation, Applied Surface Science 194, 97 (2002).
  7. Rytsölä, K., Nissilä, J., Laakso, A., Aavikko, R., and Saarinen, K., Digital measurement of positron lifetime, Applied Surface Science 194, 260 (2002). http://dx.doi.org/10.1016/S0169-4332(02)00128-9
  8. Oila, J., Ranki, V., Kivioja, J., Saarinen, K., and Hautojärvi, P., Target chamber for a slow positron beam: optimization of count rate and minimization of backscattering effects, Applied Surface Science 194, 38 (2002).
  9. Nissilä, J., Rytsölä, K., Saarinen, K., Hautojärvi, P., Successful implementation of fast preamplifiers in a positron lifetime spectrometer, Nuclear Instruments and Methods in Physics Research A 481, 548 (2002).
  10. Ranki, V., Nissilä, J., and Saarinen, K., Formation of Vacancy-Impurity Complexes by Kinetic Processes in Highly As-Doped Si, Physical Review Letters 88, 105506 (2002).

2001 (14)

  1. Slotte, J., Saarinen, K., Kuznetsov, A. Yu. and Hallén, A., Vacancy type defects in Al implanted 4H-SiC studied by positron annihilation spectroscopy, Physica B 308-310, pp. 664-667 (2001).
  2. Xiang, N., Tukiainen, A., Dekker, J., and Pessa, M., Oxygen incorporation into GaInP grown by SSMBE, Journal of Crystal Growth 227, 244 (2001).
  3. Orsila,S., Tukiainen, A., Dekker,J., Pessa, M., Effect of substrate misorientation of deep levels in SSMBE GaInP, Journal of Crystal Growth No. 227, 249 (2001).
  4. Wei Li, Pessa, M., Ahlgren, T., and Dekker, J., Origin of the improved photoluminescence efficiency of Ga(In)Nas materials grown by molecular beam epitaxy, Applied Physics Letters 79, 1094 (2001). http://ojps.aip.org/journals/doc/APPLAB-home/top.jsp
  5. Nissilä, J., Karppinen, M., Rytsölä, K., Oila, J., Saarinen, K., Hautojärvi, P., The stabilization of a positron lifetime spectrometer with a high-accuracy time reference, Nuclear Instruments and Methods in Physics Research A 466, pp. 527-537 (2001).
  6. Laakso, A., Saarinen, K., and Hautojärvi, P., Positron lifetime beam for defect studies in thin epitaxial semiconductor structures, Physica B 308-310, 1157 (2001). http://dx.doi.org/10.1016/S0921-4526(01)00929-2
  7. Saarinen, K., Suski, T., Grzegory, I., and Look, D. C., Ga vacancies in electron irradiated GaN: introduction, stability and temperature dependence of positron trapping, Physica B 308-310, 77 (2001). https://doi.org/10.1016/S0921-4526(01)00659-7
  8. Calleja, E., Sanchez-Garcia, M. A., Calle, F., Naranjo, F. B., Munoz, E., Jahn, U., Ploog, K., Sanchez, J., Calleja, J. M., Saarinen, K., and P. Hautojarvi, P., Molecular beam epitaxy growth and doping of III-nitrides on Si(111): layer morphology and doping, Materials Science and Engineering B, Solid State Materials for Advanced Technology 82, 2 (2001).
  9. Saarinen, K., Suski, T., Grzegory, I., and Look, D. C., Thermal stability of isolated and complexed Ga vacancies in GaN bulk crystals, Physical Review B 64, 233201 (2001).
  10. Oila, J., Ranki, V., Kivioja, J., Saarinen, K., Hautojärvi, P., Likonen, J., Baranowski, J. M., Pakula, K., Leszczynski, M., and Grzegory, I., Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers, Physical Review B 63, 045205 (2001).
  11. Suski, T., Litwin-Staszewska, E., Perlin, P., Wisniewski, P., Teisseyre, H., Grzegory, I., Bockowski, M., Porowski, S., Saarinen, K., and Nissilä, J., Optical and electrical properties of Be doped GaN bulk crystals, Journal of Crystal Growth 230, 368 (2001).
  12. Guina, M., Dekker, J., Tukiainen, A., Orsila, S., Saarinen, M., Dumitrescu, M., Sipilä, P., Savolainen, P., and Pessa, M., Influence of deep levels on the modulation response of InGaP light emitting diodes, Journal of Applied Physics 89, 1151-1155 (2001). http://ojps.aip.org/japo/
  13. Look, D. C., Stutz, C. E., Molnar, R. J., Saarinen, K., and Liliental-Weber, Z., Dislocation-independent mobility in lattice-mismatched epitaxy: application to GaN, Solid State Communications 117, 571-575 (2001).
  14. Nissilä, J., Saarinen, K., and Hautojärvi, P., Positron thermalization in Si and GaAs, Physical Review B 63, 165202 (2001).